Title :
Semi-insulating blocked planar BH GaInAsP/InP laser with high power and high modulation bandwidth
Author :
Koren, U. ; Miller, B.I. ; Eisenstein, Gadi ; Tucker, Rodney ; Raybon, G.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ
fDate :
2/4/1988 12:00:00 AM
Abstract :
A high-power, high-speed GaInAsP/InP laser operating at a 1.3-μm wavelength is described. The laser is obtained with three epitaxial growth steps and has semi-insulating InP blocking layers resulting in low parasitic capacitance. A 3 dB bandwidth of 14.7 GHz together with 38 mW output power has been achieved
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical modulation; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; 1.3 micron; 14.7 GHz; 38 mW; GaInAsP-InP; blocking layers; epitaxial growth steps; high modulation bandwidth; high power; low parasitic capacitance; output power;
Journal_Title :
Electronics Letters
