DocumentCode
839936
Title
Use of GaAs high-gain photoconductors as new detectors in spectroscopic systems
Author
Constant, M. ; Decoster, D. ; Vilcot, J.P.
Author_Institution
Univ. des Sci. et Tech. de Lille Flandres-Artois, Villeneuve d´Ascq
Volume
24
Issue
3
fYear
1988
fDate
2/4/1988 12:00:00 AM
Firstpage
141
Lastpage
142
Abstract
The purpose of the letter is to show the capability of GaAs planar photoconductors for use as new detectors in spectroscopic systems. After a description of the devices, their optical properties are briefly reviewed in terms of external steady-state gain. An example of the application of these devices in a conventional Raman detection system and the performance of the photoconductor array in image detection are given
Keywords
III-V semiconductors; gallium arsenide; photodetectors; spectrometer components and accessories; conventional Raman detection system; external steady-state gain; high-gain photoconductors; image detection; optical properties; planar photoconductors; spectroscopic systems;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
191590
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