• DocumentCode
    840013
  • Title

    Al0.48In0.52As/Ga0.47In0.53 As resonant tunnelling diodes with large current peak/valley ratio

  • Author

    Lakhani, A.A. ; Potter, Robert C. ; Hempfling, E. ; Aina, L.

  • Author_Institution
    Bendix Aerosp. Technol. Center, Allied-Signal Corp., Columbia, MD
  • Volume
    24
  • Issue
    3
  • fYear
    1988
  • fDate
    2/4/1988 12:00:00 AM
  • Firstpage
    153
  • Lastpage
    154
  • Abstract
    Resonant tunnelling diodes consisting of an MBE-grown AlInAs barrier on each side of a lattice-matched GaInAs well have been fabricated. Current peak/valley ratios up to 7.1 and 39 have been measured at 300 K and 77 K, respectively. These represent the largest values reported to date in any double-barrier, single-well device. The enhanced peak/valley ratio has been attributed to thick barriers (72 Å) and wide, undoped GaInAs spacer layers (400 Å)
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; tunnel diodes; 300 K; 400 A; 72 A; 77 K; MBE-grown; current peak/valley ratio; resonant tunnelling diodes; single-well device; spacer layers; thick barriers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    191598
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=840013