Title :
Al0.48In0.52As/Ga0.47In0.53 As resonant tunnelling diodes with large current peak/valley ratio
Author :
Lakhani, A.A. ; Potter, Robert C. ; Hempfling, E. ; Aina, L.
Author_Institution :
Bendix Aerosp. Technol. Center, Allied-Signal Corp., Columbia, MD
fDate :
2/4/1988 12:00:00 AM
Abstract :
Resonant tunnelling diodes consisting of an MBE-grown AlInAs barrier on each side of a lattice-matched GaInAs well have been fabricated. Current peak/valley ratios up to 7.1 and 39 have been measured at 300 K and 77 K, respectively. These represent the largest values reported to date in any double-barrier, single-well device. The enhanced peak/valley ratio has been attributed to thick barriers (72 Å) and wide, undoped GaInAs spacer layers (400 Å)
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; tunnel diodes; 300 K; 400 A; 72 A; 77 K; MBE-grown; current peak/valley ratio; resonant tunnelling diodes; single-well device; spacer layers; thick barriers;
Journal_Title :
Electronics Letters
