Title :
Two mask step polysilicon TFT technology for flat panel displays
Author :
Loisel, B. ; Haji, L. ; Sangouard, P. ; Sarret, M.
Author_Institution :
CNET, Lannion
fDate :
2/4/1988 12:00:00 AM
Abstract :
Polysilicon thin film transistors (TFTs) have been fabricated on borosilicate glass with a new, short process. In this process, indium tin oxide (ITO) is used to form the source and drain of the TFTs. The electrical characteristics of these TFTs make them suitable for the realisation of liquid crystal flat panel displays
Keywords :
elemental semiconductors; indium compounds; liquid crystal displays; masks; silicon; thin film transistors; Al-Si3N4-Si-In2-xSnxO 3-y; B2O3-SiO2; TFTs; drain; electrical characteristics; flat panel displays; liquid crystal; source; two mask step;
Journal_Title :
Electronics Letters
