Title :
Electrical properties of low-temperature pyrolytic SiO2 on InP
Author :
Bennett, B.R. ; Lorenzo, J.P. ; Vaccaro, K.
Author_Institution :
Rome Air Dev. Center, Hanscom Air Force Base, Bedford, MA, USA
fDate :
2/4/1988 12:00:00 AM
Abstract :
The first application of a new technique (SiH4+O2 at 83-330°C and 2-12 torr) for deposition of SiO2 on InP is reported. SiO2 deposited at 150-330°C has breakdown strength of 8-10 MV/cm, resistivity >1015 Ωcm, and refractive index of 1.45-1.46 comparable to thermal SiO 2 grown at 1100°C. C/V measurements on Al/SiO2/InP MIS structures suggest that very low temperature oxides (90-100°C) have the best interfacial properties
Keywords :
III-V semiconductors; aluminium; chemical vapour deposition; electric breakdown of solids; electronic conduction in insulating thin films; indium compounds; insulating thin films; metal-insulator-semiconductor structures; refractive index; semiconductor-insulator boundaries; silicon compounds; 2 to 12 torr; 83 to 330 degC; Al-SiO2-InP; C/V measurements; CVD; III-V semiconductors; InP; MIS structures; O2; SiH4; breakdown strength; interfacial properties; low-temperature pyrolytic SiO2; oxide-resistivity; refractive index;
Journal_Title :
Electronics Letters
