Title :
Starting phenomenon in negative resistance FET oscillators
Author :
Gamand, P. ; Pauker, V.
Author_Institution :
Labs. d´´Electron. et de Phys. Applique, Limeil-Brevannes, France
fDate :
7/21/1988 12:00:00 AM
Abstract :
The letter provides a study and an explanation of the starting phenomenon in an FET oscillator. It has been shown that the behaviour of the negative resistance with the amplitude of the RF signal leads to a lag effect in the response of the oscillator. This effect is due to the nonlinearity of the transconductance of the active device. Simulations have been made using accurate large signal models included in a time domain analysis software package
Keywords :
field effect transistors; oscillators; semiconductor device models; explanation; large signal models; negative resistance FET oscillators; starting phenomenon; time domain analysis software package; transconductance nonlinearity;
Journal_Title :
Electronics Letters
