Title :
Noise model for double barrier resonant tunnel diodes
Author :
van de Roer, T.G. ; Heyker, H.C. ; Kwaspen, J.J.M. ; Joosten, H.P. ; Henini, M.
Author_Institution :
Dept. of Electr. Eng., Eindhoven Univ. of Technol., Netherlands
Abstract :
A model for the noise of double barrier resonant tunnel diodes has been made on the assumption that shot noise is the main noise source. Feedback caused by the space charge in the quantum well increases the noise in the negative-resistance region and decreases it in the other regions of the I-V characteristic. This is confirmed by experiments.
Keywords :
electron device noise; semiconductor device models; tunnel diodes; I-V characteristic; double barrier resonant tunnel diodes; negative-resistance region; noise model; quantum well; shot noise; space charge;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911336
