DocumentCode
840450
Title
Molecular beam epitaxy-grown AlGaInAs/InP distributed Bragg reflectors for 1.55 μm VCSELs
Author
Reddy, M.H.M. ; Asano, T. ; Koda, R. ; Buell, D.A. ; Coldren, L.A.
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Volume
38
Issue
20
fYear
2002
fDate
9/26/2002 12:00:00 AM
Firstpage
1181
Lastpage
1182
Abstract
Solid source molecular beam epitaxy with valved P cracker source is used for the first time to grow an AlGaInAs/InP distributed Bragg reflector (DBR). The DBR shows a measured reflectivity of 98.78% for 25 pairs with a stop band of more than 100 nm. Current-voltage study shows a low drop of 4 mV/pair
Keywords
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical fibre networks; optical transmitters; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; surface emitting lasers; 1.55 micron; AlGaInAs-InP; AlGaInAs/InP; DBRs; VCSELs; current-voltage study; distributed Bragg reflectors; fibre optical communications; reflectivity; solid source molecular beam epitaxy; stop band;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20020796
Filename
1040985
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