Title :
Back-gated field effect in a double heterostructure modulation-doped field-effect transistor
Author :
Patil, M.B. ; Agarwala, S. ; Morkoc, H.
Author_Institution :
Illinois Univ., Urbana, IL
fDate :
7/21/1988 12:00:00 AM
Abstract :
An Al0.3Ga0.7As/GaAs/Al0.3Ga0.7 As double heterojunction field-effect transistor has been fabricated, the novel feature being a pn junction back gate. A device with 2 μm channel length has yielded a change in transconductance by a factor of 2 for a change in back gate voltage of 1 V. The performance of this device shows that this approach could be used in realising novel devices, such as velocity modulation transistors. Also, the change in threshold voltage with back gate bias could be useful in implementing digital circuits
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; semiconductor technology; Al0.3Ga0.7As-GaAs-Al0.3Ga 0.7As; DH MODFET; HEMT; back gate bias; back gate voltage; back gated field effect; change in threshold voltage; change in transconductance; channel length; characteristics; digital circuits; pn junction back gate; semiconductors; velocity modulation transistors;
Journal_Title :
Electronics Letters
