Title :
Towards high performance GaInAsN/GaAsN laser diodes in 1.5 μm range
Author :
Gollub, D. ; Fischer, M. ; Forchel, A.
Author_Institution :
Nanoplus Nanosystems & Technol. GmbH1, Gerbrunn, Germany
fDate :
9/26/2002 12:00:00 AM
Abstract :
GaInAsN/GaAsN/AlGaAs double quantum well lasers with emission at 1.49 μm grown by solid source molecular beam epitaxy is investigated. The devices show the lowest threshold currents (120 mA) and highest output powers (130 mW pulsed) reported to date for GaAs-based 1.5 μm lasers
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical transmitters; quantum well lasers; semiconductor epitaxial layers; semiconductor growth; 1.5 micron; 120 mA; 130 mW; GaInAsN-GaAsN-AlGaAs; GaInAsN/GaAsN/AlGaAs; double quantum well lasers; laser diodes; output powers; solid source molecular beam epitaxy; threshold currents;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020812
