Title :
Vertical cavity surface-emitting laser with an AlGaAs/AlAs Bragg reflector
Author :
Sakaguchi, T. ; Koyama, Fumio ; Iga, Kenichi
Author_Institution :
Tokyo Inst. of Technol., Yokohama
fDate :
7/21/1988 12:00:00 AM
Abstract :
The letter elucidates the room temperature pulsed operation of a vertical cavity surface-emitting laser with an electrically conductive AlGaAs/AlAs distributed Bragg reflector (DBR). The maximum reflectivity of a DBR grown by MOCVD was 96% at 0.88 μm wavelength. The threshold current of 30 μm diameter devices was 200 mA under room temperature pulsed condition, which is the lowest value for such a broad area structure
Keywords :
III-V semiconductors; aluminium compounds; chemical vapour deposition; distributed Bragg reflector lasers; gallium arsenide; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 0.88 micron; 20 C; 200 mA; 30 micron; AlGaAs-AlAs reflector; MOCVD; broad area structure; distributed Bragg reflector; reflectivity; room temperature pulsed operation; threshold current; vertical cavity surface-emitting laser; wavelength;
Journal_Title :
Electronics Letters
