Title :
Effect of cooling ambient on electrical activation of dopants in MOVPE of InP
Author :
Cole, Stijn ; Evans, Jamie S. ; Nelson, A.W. ; Wong, Simon
Author_Institution :
British Telecom Res. Labs., Ipswich
fDate :
7/21/1988 12:00:00 AM
Abstract :
The electrical doping level of p-InP (Zn or Cd) cooled from typical MOVPE growth temperatures is strongly dependent on the gaseous cooling ambient. This is the result of electrical deactivation rather than loss of the dopant. Atomic H is found in samples cooled in AsH3 or PH3 and the possibility of an H passivation mechanism is discussed
Keywords :
III-V semiconductors; indium compounds; semiconductor doping; semiconductor growth; vapour phase epitaxial growth; AsH3 atmosphere; H; H passivation mechanism; InP; MOVPE; PH3 atmosphere; electrical activation of dopants; electrical deactivation; electrical doping level; gaseous cooling ambient;
Journal_Title :
Electronics Letters
