Title :
Investigation of influence of X centres on HEMT operation at room temperature
Author :
Gots, P. ; Constant, E. ; Zimmermann, J. ; Depreeuw, D.
fDate :
7/21/1988 12:00:00 AM
Abstract :
A study of DX centres in AlGaAs layers is presented, both experimental and theoretical. It is shown that owing to DX centres, at room temperature, the microwave transconductance of HEMTs can be considerably higher than that obtained from the DC regime, and approaches the values which could be expected if DX centres did not exist. As a result, for room temperature applications, special structures designed to eliminate DX centres are not really necessary
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; semiconductor device models; solid-state microwave devices; AlGaAs layers; HEMT operation; influence of X centres; microwave transconductance; model; room temperature operation; semiconductors;
Journal_Title :
Electronics Letters
