Title :
Gate current and 2D electron concentration in HIGFET and SISFET
Author :
Depreeuw, D. ; Godts, P. ; Constant, Eric ; Zimmerman, Jeramy ; Danneville, Frangois
Author_Institution :
Univ. des Sci. et Tech. de Lille Flandres-Artois, Villeneuve d´Ascq
fDate :
7/21/1988 12:00:00 AM
Abstract :
A very simple analytical relation, without any fitting parameters, between the gate current in a HIGFET or SISFET and the 2D electron concentration giving rise to the drain current is proposed. The theoretical background which allows one to obtain this relation is first presented. Then good agreement is shown with experimental results obtained with an AlGaAs/GaAs HIGFET. Lastly, characteristics of structures which should yield high values of 2D electron concentration without too high a value of gate current are discussed
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; semiconductor device models; 2D electron concentration; AlGaAs-GaAs; HEMT; HIGFET; SISFET; analytical relation; characteristics; experimental results; gate current; model; semiconductors;
Journal_Title :
Electronics Letters
