Title :
10-Gb/s two-channel monolithic photoreceiver array using waveguide p-i-n PDs and HEMTs
Author :
Takahata, K. ; Muramoto, Y. ; Akatsu, Y. ; Akahori, Y. ; Kozen, A. ; Itaya, Y.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
fDate :
4/1/1996 12:00:00 AM
Abstract :
Two-channel side-illuminated receiver OEIC arrays comprising waveguide p-i-n photodiodes and InAlAs-InGaAs-HEMT transimpedance amplifiers were fabricated with good uniformity on a 2-in wafer. The performances of the two channels were measured by on-wafer probe measurements and showed well-matched 3-dB bandwidth of 8.0 GHz, transimpedance of 155 /spl Omega/, and crosstalk less than -20 dB. The OEIC array operates at 10 Gbit/s with sensitivities of -66.1 dBm and -15.3 dBm for each channel for a bit error rate of 10/sup -9/ at a wavelength of 1.55 μm. This is the highest bit rate yet reported for a long-wavelength monolithic photoreceiver array.
Keywords :
HEMT integrated circuits; amplifiers; integrated optoelectronics; optical crosstalk; optical receivers; optical waveguides; p-i-n photodiodes; probes; sensitivity; 1.55 mum; 10 Gbit/s; 2 in; 8 GHz; HEMTs; InAlAs-InGaAs; InAlAs-InGaAs-HEMT transimpedance amplifiers; OEIC array; bit error rate; crosstalk; good uniformity; long-wavelength monolithic photoreceiver array; on-wafer probe measurements; sensitivities; transimpedance; two-channel monolithic photoreceiver array; two-channel side-illuminated receiver OEIC arrays; waveguide p-i-n PDs; waveguide p-i-n photodiodes; Bandwidth; Bit error rate; Bit rate; Crosstalk; HEMTs; MODFETs; Optoelectronic devices; PIN photodiodes; Performance evaluation; Probes;
Journal_Title :
Photonics Technology Letters, IEEE
