DocumentCode
840636
Title
Characterisation of double quantum well GaAs/AlGaAs diode lasers
Author
Ou, S.S. ; Yang, Jie J. ; Wilcox, J.Z. ; Jansen, Maarten
Author_Institution
TRW Space & Technol. Group, Rodondo Beach, CA
Volume
24
Issue
15
fYear
1988
fDate
7/21/1988 12:00:00 AM
Firstpage
952
Lastpage
953
Abstract
High-power, double quantum well, separate confinement GaAs/AlGaAs diode lasers are characterised by power against current and spectral measurements. Short cavity length devices exhibit lower threshold current densities than equivalent single-quantum-well devices. Unlike single-quantum-well devices, no n =2 transitions are observed even for devices as short as 150 μm at 80°C. These devices are more suitable for monolithic surface-emitting applications
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; semiconductor junction lasers; 150 micron; GaAs-AlGaAs; diode lasers; double quantum well; high power type; monolithic surface-emitting applications; power/current measurements; semiconductor lasers; separate confinement; short cavity length devices; spectral measurements; threshold current densities;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
191657
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