Author :
Rolland, Antoine ; Le Corre, A. ; Favennec, P.N. ; Gauneau, M. ; Lambert, B. ; Lecrosnier, D. ; L´Haridon, H. ; Moutonnet, D.
Abstract :
Erbium doped GaAs light-emitting diodes have been fabricated from molecular beam epitaxial GaAs layers. Electroluminescence spectra were recorded at 77 K and at 300 K; two emission bands were observed at these temperatures: the GaAs band-edge emission centred at around 0.9 μm and the Er related emission centred at 1.54 μm. The variation of the electroluminescence intensities of each emission with current density is presented
Keywords :
III-V semiconductors; electroluminescence; erbium; gallium arsenide; light emitting diodes; molecular beam epitaxial growth; semiconductor doping; semiconductor growth; 0.9 micron; 1.54 micron; 300 K; 77 K; Er related emission; GaAs band-edge emission; GaAs:Er; LED; MBE layer; current density; electroluminescence intensities; electroluminescence spectra; emission bands; light-emitting diode; molecular beam epitaxial GaAs layers; semiconductor doping;
