DocumentCode
840669
Title
Erbium-doped GaAs light-emitting diode at 1.54 μm
Author
Rolland, Antoine ; Le Corre, A. ; Favennec, P.N. ; Gauneau, M. ; Lambert, B. ; Lecrosnier, D. ; L´Haridon, H. ; Moutonnet, D.
Volume
24
Issue
15
fYear
1988
fDate
7/21/1988 12:00:00 AM
Firstpage
956
Lastpage
958
Abstract
Erbium doped GaAs light-emitting diodes have been fabricated from molecular beam epitaxial GaAs layers. Electroluminescence spectra were recorded at 77 K and at 300 K; two emission bands were observed at these temperatures: the GaAs band-edge emission centred at around 0.9 μm and the Er related emission centred at 1.54 μm. The variation of the electroluminescence intensities of each emission with current density is presented
Keywords
III-V semiconductors; electroluminescence; erbium; gallium arsenide; light emitting diodes; molecular beam epitaxial growth; semiconductor doping; semiconductor growth; 0.9 micron; 1.54 micron; 300 K; 77 K; Er related emission; GaAs band-edge emission; GaAs:Er; LED; MBE layer; current density; electroluminescence intensities; electroluminescence spectra; emission bands; light-emitting diode; molecular beam epitaxial GaAs layers; semiconductor doping;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
191660
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