DocumentCode :
840698
Title :
Strained n-Channel FinFETs Featuring In Situ Doped Silicon–Carbon 
Source and Drain Stress
Author :
Liow, Tsung-Yang ; Tan, Kian-Ming ; Weeks, Doran ; Lee, Rinus Tek Po ; Zhu, Ming ; Hoe, Keat-Mun ; Tung, Chih-Hang ; Bauer, Matthias ; Spear, Jennifer ; Thomas, Shawn G. ; Samudra, Ganesh S. ; Balasubramanian, N. ; Yeo, Yee-Chia
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
Volume :
55
Issue :
9
fYear :
2008
Firstpage :
2475
Lastpage :
2483
Abstract :
Phosphorus in situ doped (Si1-yCy) films (SiC:P) with substitutional carbon concentration of 1.7% and 2.1% were selectively grown in the source and drain regions of double-gate -oriented (110)-sidewall FinFETs to induce tensile strain in the silicon channel. In situ doping removes the need for a high-temperature spike anneal for source/drain (S/D) dopant activation and thus preserves the carbon substitutionality in the SiC:P films as grown. A strain-induced enhancement of 15% and 22% was obtained for n-channel FinFETs with 1.7% and 2.1% carbon incorporated in the S/D, respectively.
Keywords :
MOSFET; annealing; phosphorus; semiconductor doping; semiconductor growth; semiconductor thin films; silicon compounds; tensile strength; wide band gap semiconductors; Si1-yCy:P; SiC:P films; carbon substitution; drain stressors; high carbon content; high-temperature spike annealing; phosphorus in situ doped silicon-carbon source; source/drain dopant activation; strained n-channel FinFET; tensile strain; Annealing; Capacitive sensors; FinFETs; Germanium alloys; Lattices; Microelectronics; Semiconductor films; Silicon; Stress; Tensile strain; FinFET; in situ doped; multiple-gate field-effect transistor (MuGFET); silicon–carbon; strain; stress;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2008.928025
Filename :
4603174
Link To Document :
