Title :
A monolithically integrated InGaAs-InP p-i-n/JFET focal plane array
Author :
Kim, Dong-Su ; Forrest, Stephen R. ; Lange, Michael J. ; Olsen, Gregory H. ; Kosonocky, Walter
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
fDate :
4/1/1996 12:00:00 AM
Abstract :
We describe a monolithic InGaAs-InP focal plane array for near-infrared imaging. The array consists of an InGaAs p-i-n diode as a photodetector integrated with an InP junction field effect transistor (JFET) as a switching element for each pixel. In order to minimize the drain and gate leakage to achieve high-detection sensitivity, a novel -p-encapsulation" JFET was employed. Arrays as large as 16/spl times/16 were fabricated, consisting of 528 devices integrated into a single array with >99% individual device yield. This array represents significant progress in InP-based materials and integration technologies.
Keywords :
III-V semiconductors; JFET integrated circuits; electro-optical switches; focal planes; gallium arsenide; indium compounds; infrared imaging; integrated optoelectronics; p-i-n photodiodes; photodetectors; semiconductor switches; sensitivity; InGaAs p-i-n diode; InGaAs-InP; InGaAs-InP p-i-n/JFET focal plane array; InP junction field effect transistor; InP-based materials; gate leakage; high-detection sensitivity; individual device yield; integration technologies; monolithically integrated; near-infrared imaging; p-encapsulation JFET; photodetector; pixel; single array; switching element; Detectors; FETs; Gate leakage; Indium gallium arsenide; Indium phosphide; Infrared imaging; Multiplexing; Optical imaging; PIN photodiodes; Photodetectors;
Journal_Title :
Photonics Technology Letters, IEEE
