• DocumentCode
    840738
  • Title

    InP/Ga0.47In0.53As superlattice avalanche photodiode

  • Author

    Batra, Shalini ; Lahiri, Amitabha ; Chakrabarti, P.

  • Author_Institution
    Dept. of Electron. & Commun. Eng., Bina Inst. of Technol., Ranchi
  • Volume
    24
  • Issue
    15
  • fYear
    1988
  • fDate
    7/21/1988 12:00:00 AM
  • Firstpage
    964
  • Lastpage
    965
  • Abstract
    The author reports a theoretical study on the photoresponse characteristics of an InP/Ga0.47In0.53As superlattice p+ in+ APD for operation in the 1-1.6 μm wavelength region. It has been found that the β/α ratio for the structure is 16 for an electric field E=3×107/m. The device is thus expected to become an attractive low-noise detector for fibre-optic communication systems. The device has a quantum efficiency of 60% at λ=1.3 μm. The bandwidth of the response curve is approximately 100 MHz
  • Keywords
    III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; optical communication equipment; photodetectors; 1 to 1.6 micron; 100 MHz; 60 percent; III-V semiconductors; InP-Ga0.47In0.53As; fibre-optic communication systems; low-noise detector; p+ in+ APD; photoresponse characteristics; quantum efficiency; superlattice avalanche photodiode;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    191666
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=840738