Title :
InP/Ga0.47In0.53As superlattice avalanche photodiode
Author :
Batra, Shalini ; Lahiri, Amitabha ; Chakrabarti, P.
Author_Institution :
Dept. of Electron. & Commun. Eng., Bina Inst. of Technol., Ranchi
fDate :
7/21/1988 12:00:00 AM
Abstract :
The author reports a theoretical study on the photoresponse characteristics of an InP/Ga0.47In0.53As superlattice p+ in+ APD for operation in the 1-1.6 μm wavelength region. It has been found that the β/α ratio for the structure is 16 for an electric field E=3×107/m. The device is thus expected to become an attractive low-noise detector for fibre-optic communication systems. The device has a quantum efficiency of 60% at λ=1.3 μm. The bandwidth of the response curve is approximately 100 MHz
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; optical communication equipment; photodetectors; 1 to 1.6 micron; 100 MHz; 60 percent; III-V semiconductors; InP-Ga0.47In0.53As; fibre-optic communication systems; low-noise detector; p+ in+ APD; photoresponse characteristics; quantum efficiency; superlattice avalanche photodiode;
Journal_Title :
Electronics Letters
