DocumentCode
840772
Title
Analytical analysis of short-channel effects in MOSFETs for sub-100 nm technology
Author
Park, Ji-Sun ; Lee, Seung-Yeon ; Shin, Hyungsoon ; Dutton, R.W.
Author_Institution
Dept. of Inf. Electron. Eng., Ehwa Women´´s Univ., Seoul, South Korea
Volume
38
Issue
20
fYear
2002
fDate
9/26/2002 12:00:00 AM
Firstpage
1222
Lastpage
1223
Abstract
Using a scaling length (λ) analysis, the short-channel effects of bulk MOSFETs with super-steep retrograded channels (SSR), fully-depleted SOI, and double-gate structures are investigated. It is found that the minimum channel length should be greater than 5λ and the depletion thickness of the SSR should be less than 30 nm in order to be applicable to 70 nm CMOS technology
Keywords
CMOS integrated circuits; MOSFET; nanotechnology; silicon-on-insulator; 30 nm; 70 to 100 nm; CMOS technology; Si; bulk MOSFETs; depletion thickness; double-gate structures; fully-depleted SOI; minimum channel length; scaling length analysis; short-channel effects; sub-100 nm technology; super-steep retrograded channels;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20020797
Filename
1041012
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