Title :
A Dual Workfunction Gate for Thin-Gate-Insulator Schottky-Barrier MOSFETs
Author :
Shih, Chun-Hsing ; Yeh, Sheng-Pin
Author_Institution :
Dept. of Electr. Eng., Yuan Ze Univ., Taoyuan
Abstract :
A dual workfunction gate (DWG) is proposed for the thin-gate-insulator Schottky-barrier MOSFETs (SBMOS) to adjust the barrier distributions by self-aligned tilt-angle implantation. Effects of DWG on SBMOS are investigated using 2-D simulations. Against junction engineering by dopant segregation, as the gate insulator scaled, the stronger gate coupling from DWG can both improve the on-state barrier lowering for electron and enhance the off-state barrier widening for hole. By using DWG architecture, SBMOS can be successfully scaled with thinner gate insulator as the promising candidate for next-generation CMOS devices.
Keywords :
MOSFET; Schottky barriers; Schottky gate field effect transistors; work function; dual workfunction gate; self-aligned tilt-angle implantation; thin-gate-insulator Schottky-barrier MOSFET; CMOS technology; Charge carrier processes; Contact resistance; Insulation; Leakage current; MOSFETs; Numerical simulation; Power engineering and energy; Silicidation; Tunneling; Dopant segregation; Schottky-barrier MOSFETs (SBMOS); dual workfunction gate (DWG); thin gate insulator;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2008.927661
