Title :
Electrical isolation of n-type InP using MeV iron implantation at different doses and substrate temperatures
Author :
Too, P. ; Ahmed, S. ; Jeynes, C. ; Sealy, B.J. ; Gwilliam, R.
Author_Institution :
Sch. of Electron., Comput. & Math., Surrey Univ., Guildford, UK
fDate :
9/26/2002 12:00:00 AM
Abstract :
An effective inter-device isolation has been obtained by implanting iron into n-type InP. The effect of 1 MeV iron (Fe) implantation into n-type InP at 77 K, room temperature (RT) and 200°C has been investigated with various ion doses in the range of 1 × 1012 to 1 × 1015/cm2. It is found that RT and 77 K implants show better isolation than 200°C implants. Rutherford backscattering spectrometry (RBS) is used to gain a better understanding of the isolation mechanisms
Keywords :
III-V semiconductors; indium compounds; ion implantation; iron; isolation technology; substrates; 77 K to 200 C; InP:Fe; MeV Fe implantation; RBS; Rutherford backscattering spectrometry; electrical isolation; implantation doses; inter-device isolation; isolation mechanisms; n-type InP; substrate temperatures;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020803
