• DocumentCode
    840787
  • Title

    Electrical isolation of n-type InP using MeV iron implantation at different doses and substrate temperatures

  • Author

    Too, P. ; Ahmed, S. ; Jeynes, C. ; Sealy, B.J. ; Gwilliam, R.

  • Author_Institution
    Sch. of Electron., Comput. & Math., Surrey Univ., Guildford, UK
  • Volume
    38
  • Issue
    20
  • fYear
    2002
  • fDate
    9/26/2002 12:00:00 AM
  • Firstpage
    1225
  • Lastpage
    1226
  • Abstract
    An effective inter-device isolation has been obtained by implanting iron into n-type InP. The effect of 1 MeV iron (Fe) implantation into n-type InP at 77 K, room temperature (RT) and 200°C has been investigated with various ion doses in the range of 1 × 1012 to 1 × 1015/cm2. It is found that RT and 77 K implants show better isolation than 200°C implants. Rutherford backscattering spectrometry (RBS) is used to gain a better understanding of the isolation mechanisms
  • Keywords
    III-V semiconductors; indium compounds; ion implantation; iron; isolation technology; substrates; 77 K to 200 C; InP:Fe; MeV Fe implantation; RBS; Rutherford backscattering spectrometry; electrical isolation; implantation doses; inter-device isolation; isolation mechanisms; n-type InP; substrate temperatures;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20020803
  • Filename
    1041014
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=840787