Title :
Emitter-down, Schottky collector HJBT for very fast, high-density logic applications
Author :
Hau, S. ; Eccleston, W. ; Roberts, Jeffrey S.
Author_Institution :
Liverpool Univ.
fDate :
7/21/1988 12:00:00 AM
Abstract :
A novel form of direct-coupled logic is reported, incorporating an `emitter-down´ heterojunction bipolar transistor with a Schottky collector as the switching element and a pinched-off MESFET as the load. This technology has the potential for very high packaging density together with high speed because the Schottky cannot store charge. Results are presented for the bipolar device, and problems associated with `inverted´ operation are discussed
Keywords :
Schottky effect; bipolar transistors; integrated logic circuits; monolithic integrated circuits; HJBT; Schottky collector; direct-coupled logic; emitter down type; heterojunction bipolar transistor; high packaging density; high speed; high-density logic applications; inverted operation; pinched off MESFET load; pinched-off MESFET; switching element;
Journal_Title :
Electronics Letters
