DocumentCode
840792
Title
Emitter-down, Schottky collector HJBT for very fast, high-density logic applications
Author
Hau, S. ; Eccleston, W. ; Roberts, Jeffrey S.
Author_Institution
Liverpool Univ.
Volume
24
Issue
15
fYear
1988
fDate
7/21/1988 12:00:00 AM
Firstpage
971
Lastpage
973
Abstract
A novel form of direct-coupled logic is reported, incorporating an `emitter-down´ heterojunction bipolar transistor with a Schottky collector as the switching element and a pinched-off MESFET as the load. This technology has the potential for very high packaging density together with high speed because the Schottky cannot store charge. Results are presented for the bipolar device, and problems associated with `inverted´ operation are discussed
Keywords
Schottky effect; bipolar transistors; integrated logic circuits; monolithic integrated circuits; HJBT; Schottky collector; direct-coupled logic; emitter down type; heterojunction bipolar transistor; high packaging density; high speed; high-density logic applications; inverted operation; pinched off MESFET load; pinched-off MESFET; switching element;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
191671
Link To Document