• DocumentCode
    840810
  • Title

    MESFET large-signal model based on small-signal measurements for time-domain CAD

  • Author

    Ouslimani, A. ; Vernet, G. ; Henaux, J.C. ; Crozat, P. ; Adde, R.

  • Author_Institution
    Univ. de Paris-Sud, Orsay
  • Volume
    24
  • Issue
    15
  • fYear
    1988
  • fDate
    7/21/1988 12:00:00 AM
  • Firstpage
    973
  • Lastpage
    974
  • Abstract
    A large-signal model using a full transistor characterisation is developed for time-domain CAD of circuits. It uses 2-D look-up tables to describe the FETs nonlinear parameters which are a function of two internal voltages. It is validated in an experimental study of the step response of an NEC3SK MESFET
  • Keywords
    Schottky gate field effect transistors; circuit CAD; equivalent circuits; semiconductor device models; table lookup; time-domain synthesis; 2D lookup tables; MESFET; NEC3SK; computer aided design; full transistor characterisation; large-signal model; nonlinear parameters; small-signal measurements; step response; time-domain CAD;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    191672
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=840810