DocumentCode
840813
Title
Ion implanted camel diodes fabricated on high resistivity silicon for microwave and millimetre-wave applications
Author
Van Tuyen, Vo ; Hu, Zhirun ; Rezazadeh, A.A. ; Wu, Yunhong
Author_Institution
Dept. of Electron. Eng., King´´s Coll., London, UK
Volume
38
Issue
20
fYear
2002
fDate
9/26/2002 12:00:00 AM
Firstpage
1228
Lastpage
1229
Abstract
An ion implanted n+-n--p+-n+ bulk unipolar camel diode on a high resistivity silicon substrate has been designed and fabricated. The bulk unipolar diode characteristics have successfully demonstrated with barrier height of 0.69 V and ideality factor of 1.7. Using multi-implantation process alone to form the layer structure significantly reduces the device unit cost. To the best of the authors´ knowledge this is the first fully ion implanted camel diode reported on high resistivity silicon
Keywords
ion implantation; microwave diodes; millimetre wave diodes; silicon; substrates; 0.69 V; MM-wave applications; Si; barrier height; bulk unipolar diode characteristics; high resistivity Si substrate; ideality factor; ion implanted camel diodes; microwave applications; multi-implantation process; n+-n--p+-n+ bulk unipolar diode;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20020782
Filename
1041016
Link To Document