DocumentCode
840842
Title
70 GHz integrated silicon oscillator
Author
Buechler, J. ; Kasper, Erich ; Luy, J.F. ; Russer, Peter ; Strohm, K.M.
Author_Institution
Tech. Univ. Munchen
Volume
24
Issue
15
fYear
1988
fDate
7/21/1988 12:00:00 AM
Firstpage
977
Lastpage
978
Abstract
Planar oscillators on highly insulating Si substrate with a disc resonator were fabricated. The active element was an IMPATT diode made from Si MBE material. A maximum CW output power of 200 mW with an efficiency of 4.5% at 73 GHz has been obtained
Keywords
IMPATT diodes; microwave integrated circuits; microwave oscillators; 200 mW; 4.5 percent; 70 to 73 GHz; EHF; IMPATT diode; MIC; MM-wave IC; Si; Si MBE material; disc resonator; highly insulating Si substrate; maximum CW output power; millimetre wave circuits; planar microwave oscillator;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
191675
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