Title :
Monolithically integrated InGaAsP/InP composite-cavity distributed feedback lasers
Author :
Liou, K.Y. ; Koren, U. ; Koch, T.L. ; Chandrasekhar, S. ; Burrows, E.C. ; Burrus, C.A.
Author_Institution :
AT&T Bell Lab., Holmdel, NJ, USA
Abstract :
Linewidth reduction to 1 MHz for monolithically integrated extended-cavity DFB lasers that are designed to achieve high optical coupling to a low-loss extended cavity is described. Since a high-efficiency extended cavity at the same time degrades the frequency-modulation (FM) response, an active gain section is integrated at the end of the extended cavity, and its use as a modulator section that maintains a flat FM response at 0.7 GHz/mA is shown. The linewidth and FM characteristics of this DFB extended-passive/active-cavity laser are compared to those of the conventional DFB extended-passive-cavity laser and a two-section DFB laser.<>
Keywords :
III-V semiconductors; distributed feedback lasers; frequency modulation; gallium arsenide; indium compounds; integrated optics; laser cavity resonators; optical modulation; semiconductor junction lasers; FM characteristics; III-V semiconductor; InGaAsP-InP; InGaAsP/InP composite-cavity distributed feedback lasers; active gain section; extended-passive/active-cavity laser; flat FM response; frequency-modulation; high optical coupling; high-efficiency extended cavity; linewidth; linewidth reduction; low-loss extended cavity; modulator section; monolithically integrated extended-cavity DFB lasers; two-section DFB laser; Degradation; Distributed feedback devices; Fabry-Perot; Frequency modulation; Indium phosphide; Laser feedback; Laser stability; Optical coupling; Semiconductor lasers; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
