DocumentCode
840890
Title
High K BaTiO/sub 3/ films from metalloorganic precursors
Author
Xu, J.J. ; Shaikh, A.S. ; Vest, R.W.
Author_Institution
Turner Lab., Purdue Univ., West Lafayette, IN, USA
Volume
36
Issue
3
fYear
1989
fDate
5/1/1989 12:00:00 AM
Firstpage
307
Lastpage
312
Abstract
Crack-free and dense BaTiO/sub 3/ films 4 to 8 mu m thick were prepared by spinning a solution of metalloorganic precursors onto an appropriate substrate, and firing and annealing the film in air at certain temperatures to obtain appropriate grain sizes. The electrical properties of the films were studied as a function of grain size, temperature, frequency, and DC bias. Films with a grain size of 0.2 mu m showed ferroelectric properties similar to bulk BaTiO/sub 3/.<>
Keywords
annealing; barium compounds; coating techniques; ferroelectric thin films; grain size; 4 to 8 micron; BaTiO/sub 3/ films; DC bias; annealing; ferroelectric properties; firing; frequency; grain sizes; metalloorganic precursors; temperature; Barium; Dielectric constant; Ferroelectric films; Ferroelectric materials; Grain size; High K dielectric materials; High-K gate dielectrics; Sputtering; Substrates; Temperature;
fLanguage
English
Journal_Title
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher
ieee
ISSN
0885-3010
Type
jour
DOI
10.1109/58.19168
Filename
19168
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