DocumentCode
840897
Title
Low-threshold patterned quantum well lasers grown by molecular beam epitaxy
Author
Kapon, E. ; Yun, C.P. ; Harbison, J.P. ; Florez, L.T. ; Stoffel, N.G.
Author_Institution
Bell Commun Res, Red. Bank, NJ, USA
Volume
24
Issue
16
fYear
1988
fDate
8/4/1988 12:00:00 AM
Firstpage
985
Lastpage
986
Abstract
GaAs/AlGaAs patterned quantum well lasers were grown by molecular beam epitaxy on grooved substrates. The carrier confinement and the real-index waveguiding in these lasers rely on lateral thickness variations in the quantum well active layer. Very low threshold currents, as low as 1.8 mA for uncoated devices at room temperature, with 63% differential efficiency have been obtained
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; molecular beam epitaxial growth; semiconductor growth; semiconductor junction lasers; 1.8 mA; 63 percent; GaAs-AlGaAs; MBE; carrier confinement; differential efficiency; grooved substrates; lateral thickness variations; low threshold currents; molecular beam epitaxy; patterned quantum well lasers; real-index waveguiding; semiconductors; uncoated devices;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
191682
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