Title :
GaInAs pin photodiode/GaAs preamplifier photoreceiver for gigabit-rate communications systems using flip-chip bonding techniques
Author :
Makiuchi, M. ; Hamaguchi, H. ; Kumai, T. ; Aoki, O. ; Oikawi, Y. ; Wada, O.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fDate :
8/4/1988 12:00:00 AM
Abstract :
Reports on an integrated photoreceiver using a flip-chip bonding technique. The integrated photoreceiver consists of a back-illuminated GaInAs/InP pin photodiode with a small junction area and a GaAs high-impedance preamplifier having a two-stage amplifier. The quantum efficiency and the cut-off frequency of the pin photodiode were 81% and 19GHz. This photoreceiver exhibited good practical performance characteristics, including a minimum detectable power of -29.8 dBm at 1 Gbit/s, and -26.9 dBm at 2 Gbit/s
Keywords :
III-V semiconductors; field effect integrated circuits; flip-chip devices; gallium arsenide; indium compounds; integrated optoelectronics; optical communication equipment; photodiodes; 19 GHz; 2 Gbit/s; 81 percent; GaAs preamplifier; GaInAs-InP photodiode; OEIC; cut-off frequency; flip-chip bonding techniques; gigabit-rate communications systems; integrated photoreceiver; minimum detectable power; quantum efficiency; semiconductors;
Journal_Title :
Electronics Letters
