Self-pulsation in an InGaN laser-theory and experiment

Author

Tronciu, V.Z. ; Yamada, Minoru ; Ohno, Tomoki ; Ito, Shigetoshi ; Kawakami, Toshiyuki ; Taneya, Mototaka

Author_Institution

Dept. of Electr. & Electron. Eng., Kanazawa Univ., Japan

Volume

39

Issue

12

fYear

2003

Firstpage

1509

Lastpage

1514

Abstract

Room-temperature operation of self-pulsating InGaN lasers was obtained at a wavelength of 395 nm. The laser structure consists of a multiquantum-well InGaN active layer and a p-type InGaN single-quantum-well saturable absorber. The frequency range of the self-pulsation was from 1.6 to 2.9 GHz. The experimental results were well explained with our theoretical analysis. We found that features of the saturable absorber strongly affect the self-pulsation. Influence of device and material parameters on the laser dynamics was also investigated.

Keywords

III-V semiconductors; bifurcation; carrier lifetime; gallium compounds; indium compounds; laser cavity resonators; optical saturable absorption; quantum well lasers; wide band gap semiconductors; 395 nm; InGaN; bifurcation diagrams; carrier lifetime; device parameters; different cavity lengths; laser dynamics; material parameters; multiquantum-well active layer; room-temperature operation; self-pulsating lasers; single-quantum-well saturable absorber; Indium tin oxide; Laser feedback; Laser modes; Laser theory; Optical device fabrication; Optical feedback; Optical materials; Quantum well devices; Temperature; Threshold current;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2003.819541

Filename

1253219