Title :
Origin of residual semiconductor-laser linewidth in high-power limit
Author_Institution :
Dept. of Electron Eng., Tokyo Univ.
fDate :
8/4/1988 12:00:00 AM
Abstract :
The FM noise spectrum and the spectral width of semiconductor lasers are measured in the high-power state up to 20 mW. The FM noise spectrum consists of the white noise and the 1/f noise. The spectral density of the white noise is suppressed by the increase in the output power, whereas that of the 1/f noise is kept constant. This fact means that the residual linewidth in the high-power limit is caused by the 1/f noise rather than the white noise
Keywords :
optical communication equipment; random noise; semiconductor junction lasers; 1/f noise; 20 mW; FM noise spectrum; high-power limit; residual semiconductor-laser linewidth; spectral density; spectral width; white noise;
Journal_Title :
Electronics Letters
