Title :
High-power highly reliable 1.02-1.06-/spl mu/m InGaAs strained-quantum-well laser diodes
Author :
Yuda, Masahiro ; Sasaki, Toru ; Temmyo, Jiro ; Sugo, Mitsuru ; Amano, Chikara
Author_Institution :
NTT Photonics Labs., NTT Corp., Kanagawa, Japan
Abstract :
By growing the InGaAs active layer at temperatures lower than in conventional growth, we extended the lasing wavelength and presented the high reliability in InGaAs strained-quantum-well laser diodes. Equivalent I-L characteristics were obtained for 1.02-, 1.05-, and 1.06-/spl mu/m laser diodes with a cavity length of 1200 /spl mu/m. Maximum output power as high as 800 mW and fundamental transverse mode operation at up to 400 mW were obtained at 1.06 /spl mu/m and an 1800-/spl mu/m cavity. Stable operation was observed for over 14 000 h under auto-power-control of 225 mW at 50/spl deg/C for the 1.02-, 1.05-, and 1.06-/spl mu/m lasers with a 900-/spl mu/m cavity.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; laser reliability; laser stability; photoluminescence; quantum well lasers; semiconductor growth; semiconductor optical amplifiers; vapour phase epitaxial growth; 1.02 to 1.06 micron; 800 mW; InGaAs; equivalent I-L characteristics; extended lasing wavelength; high reliability; high-power lasers; low-pressure metalorganic vapor phase epitaxy; low-temperature growth; modified separate-confinement heterostructure; photoluminescence peak intensity; semiconductor optical amplifiers; stable operation; strained-quantum-well laser diodes; Diode lasers; Indium gallium arsenide; Optical fiber amplifiers; Optical fiber communication; Power generation; Quantum well lasers; Semiconductor lasers; Semiconductor optical amplifiers; Temperature; Wavelength division multiplexing;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2003.819561
