DocumentCode
841112
Title
Bistable operation of 0.8 μm GaInAsP/GaAs lasers
Author
Ishikawa, Jun ; Ito, Takao ; Takahashi, N.S. ; Kurita, Satoshi
Author_Institution
Dept. of Sci & Technol., Keio Univ., Yokohama
Volume
24
Issue
16
fYear
1988
fDate
8/4/1988 12:00:00 AM
Firstpage
1014
Lastpage
1016
Abstract
Quaternary GaInAsP prepared on GaAs is a very promising material for optoelectronic devices in alternating AlGaAs/GaAs systems. The authors report bistable operation in stripe geometry GaInAsP/GaAs DH lasers with gain region and absorbing region in the laser resonator. A hysteresis loop is observed in the I /L curve under pulsed operation at room temperature
Keywords
III-V semiconductors; gallium arsenide; hysteresis; indium compounds; integrated optoelectronics; semiconductor junction lasers; semiconductor technology; 0.8 micron; GaInAsP-GaAs lasers; I/L curve; absorbing region; bistable operation; gain region; hysteresis loop; laser resonator; optoelectronic devices; pulsed operation; room temperature operation; semiconductors; stripe geometry GaInAsP/GaAs DH lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
191702
Link To Document