Title :
Detectivity of high-gain GaAs photoconductive detectors
Author :
Constant, M. ; Decoster, D. ; Vilcot, J.P.
Author_Institution :
CNRS, Univ. des Sci. Et Techniques de Lille Flandres-Artois., Villeneuve d´Ascq.
fDate :
8/4/1988 12:00:00 AM
Abstract :
Detailed studies of noise properties and dynamic responsivity of GaAs planar photoconductors have been made in the 1 Hz-100 kHz frequency range. The results obtained lead to the determination of the specific detectivity of the devices, which in turn is compared to that of Si photodiodes
Keywords :
III-V semiconductors; electron device noise; gallium arsenide; photoconductive cells; photodetectors; semiconductor device models; 1 Hz to 100 kHz; GaAs planar photoconductors; Si photodiodes; dynamic responsivity; frequency range; high gain photoconductors; low light power levels; noise properties; photoconductive detectors; semiconductors; specific detectivity;
Journal_Title :
Electronics Letters
