Title :
CMOS compatible, self-biased bipolar transistor aimed at detecting maximum temperature in a silicon integrated circuit
Author :
Bafleur, Marise ; Buxo, J. ; Sarrabayrouse, G. ; Millan, James ; Hidalgo, Soraya
Author_Institution :
LAAS du CNRS., Toulouse.
fDate :
8/4/1988 12:00:00 AM
Abstract :
A new bipolar device, fully CMOS compatible, that properly detects and amplifies the leakage current of a reverse-biased bulk junction is presented. The amplification factor is the current gain hFE of the bipolar transistor which is maximised and independent of all spurious and less reproducible surface and space-charge recombination mechanisms
Keywords :
bipolar transistors; electron-hole recombination; monolithic integrated circuits; Si integrated circuit; amplification factor; current gain; fully CMOS compatible; leakage current; maximum temperature; reverse-biased bulk junction; self-biased bipolar transistor; space-charge recombination mechanisms;
Journal_Title :
Electronics Letters
