DocumentCode :
841225
Title :
Half-Bridge and Full-Bridge Choke Converter Concepts for the Pulsed Operation of Large Dielectric Barrier Discharge Lamps
Author :
Kyrberg, Karl ; Güldner, Henry ; Rupp, Arnulf ; Schallmoser, Oskar
Author_Institution :
Inst. of Electr. Power Eng. & Power Electron., Technische Univ. Dresden
Volume :
22
Issue :
3
fYear :
2007
fDate :
5/1/2007 12:00:00 AM
Firstpage :
926
Lastpage :
933
Abstract :
The paper presents a new configuration of electronic ballast for large dielectric barrier discharge lamps used in backlighting applications. The new ballast is developed for PLANON lamps, manufactured by Osram. This lamp features environmental friendliness, a long lifetime and no startup time due to external electrodes and a mercury-free Xenon gas mixture. The mainly used ballast topology is the Class-E converter. Two novel ballast topologies-the half-bridge and the full-bridge choke converter concepts-are demonstrated. Measurement results of the proposed topologies under variation of input parameters are presented. An isolated metal oxide semiconductor field effect transistor drive concept which fulfills the requirements of the ballast is developed and implemented. An equivalent circuit diagram for the lamp is determined and compared with measurement results. The proposed topologies can significantly increase the lamp´s luminous efficacy compared to Class-E topology
Keywords :
AC-DC power convertors; bridge circuits; discharge lamps; electric breakdown; gas mixtures; lamp accessories; lighting; Osram; PLANON lamps; backlighting; ballast topology; class-E converter; equivalent circuit diagram; full-bridge choke converter; half-bridge choke converter; isolated metal oxide semiconductor field effect transistor drive; large dielectric barrier discharge lamps; luminous efficacy; mercury-free Xenon gas mixture; Circuit topology; Dielectrics; Electrodes; Electronic ballasts; Equivalent circuits; FETs; Inductors; Lamps; Manufacturing; Xenon; Class-E converter; dielectric barrier discharge lamp; high side gate drive; metal oxide semiconductor field effect transistor (MOSFET) series connection;
fLanguage :
English
Journal_Title :
Power Electronics, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-8993
Type :
jour
DOI :
10.1109/TPEL.2007.897003
Filename :
4182466
Link To Document :
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