Title :
Sub-mA threshold 1.5-μm VCSELs with epitaxial and dielectric DBR mirrors
Author :
Decai Sun ; Wenjun Fan ; Kner, P. ; Boucart, J. ; Kageyama, T. ; Pathak, Ravi ; Dongxu Zhang ; Wupen Yuen
Author_Institution :
Bandwidth9, Fremont, CA, USA
Abstract :
We report low threshold 1.5-μm vertical-cavity surface-emitting lasers with epitaxial and dielectric distributed Bragg reflector (DBRs). The device consists of a lattice-matched InAlAs-InAlGaAs DBR grown on an InP substrate, an InAlGaAs quantum well active region, a metamorphic GaAs tunnel junction, and a SiO2-TiO2 dielectric DBR. The current confinement is achieved by oxidizing an AlAs metamorphic layer grown on top of the active region. Small aperture devices show a minimum threshold of 0.8 mA at room temperature in continuous-wave operation.
Keywords :
aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; indium compounds; quantum well lasers; surface emitting lasers; thermal resistance; 0.8 mA; 1.5 micron; InAlAs-InAlGaAs; InAlGaAs quantum well active region; InP substrate; SiO/sub 2/-TiO/sub 2/ dielectric; continuous-wave operation; current confinement; dielectric DBR mirrors; epitaxial DBR mirrors; metamorphic GaAs tunnel junction; minimum threshold; sub-mA threshold 1.5-/spl mu/m VCSELs; vertical-cavity surface-emitting lasers; Apertures; Dielectric devices; Dielectric substrates; Distributed Bragg reflectors; Gallium arsenide; Indium phosphide; Mirrors; Quantum well lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2003.819711
