Title :
Low-drive-voltage, low-loss AlGaAs/GaAs 2×2 switch
Author :
Wüthrich, C. ; Faist, J. ; Baer, W. ; Reinhart, F.K.
Author_Institution :
Inst. de Micro et Opto. Electron., EPFL., Lausanne, Switzerland
fDate :
8/4/1988 12:00:00 AM
Abstract :
Reports the realisation of a 2×2 switch using a Mach-Zehnder interferometer with tunable coupler sections. The structure is based on a GaAs-AlGaAs double hetero-structure with SnO2-doped In2O3 electrodes. At a wave-length of 1.15 μm, this device is characterised by a low switching voltage of 7.5 V and a low loss of 4 dB/cm. A high extinction ratio of 20 dB can be achieved
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; light interferometers; optical couplers; 1.15 micron; 7.5 V; GaAs-AlGaAs; In2O3:SnO2; Mach-Zehnder interferometer with tunable coupler sections; double hetero-structure; extinction ratio; loss; switching voltage;
Journal_Title :
Electronics Letters
