DocumentCode
841438
Title
Compensating effects in time-dependent dielectric breakdown [MOS capacitors]
Author
Chan, C.K. ; Carey, M.B.
Author_Institution
AT&T Bell Labs., Holmdel, NJ, USA
Volume
41
Issue
3
fYear
1992
fDate
9/1/1992 12:00:00 AM
Firstpage
414
Lastpage
420
Abstract
Current and cathode electric field data have been measured in a constant-voltage accelerated test of metal-oxide-silicon (MOS) capacitors. The data show that the coefficients in the Fowler-Nordheim equation are: (1) random variables (varying across the MOS capacitors), and (2) have a correlation coefficient of 0.88. The analysis suggests that for typical electric fields used in accelerated testing of MOS capacitors, the standard deviation of log (failure time) increases with decreasing electrical stress
Keywords
electric breakdown of solids; life testing; metal-insulator-semiconductor structures; semiconductor device testing; Fowler-Nordheim equation; MOS capacitors; accelerated testing; cathode electric field data; compensating effects; constant-voltage accelerated test; current data; electrical stress; time-dependent dielectric breakdown; Cathodes; Current measurement; Dielectric breakdown; Dielectric measurements; Electric variables measurement; Equations; Life estimation; MOS capacitors; Random variables; Testing;
fLanguage
English
Journal_Title
Reliability, IEEE Transactions on
Publisher
ieee
ISSN
0018-9529
Type
jour
DOI
10.1109/24.159810
Filename
159810
Link To Document