DocumentCode :
841438
Title :
Compensating effects in time-dependent dielectric breakdown [MOS capacitors]
Author :
Chan, C.K. ; Carey, M.B.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
Volume :
41
Issue :
3
fYear :
1992
fDate :
9/1/1992 12:00:00 AM
Firstpage :
414
Lastpage :
420
Abstract :
Current and cathode electric field data have been measured in a constant-voltage accelerated test of metal-oxide-silicon (MOS) capacitors. The data show that the coefficients in the Fowler-Nordheim equation are: (1) random variables (varying across the MOS capacitors), and (2) have a correlation coefficient of 0.88. The analysis suggests that for typical electric fields used in accelerated testing of MOS capacitors, the standard deviation of log (failure time) increases with decreasing electrical stress
Keywords :
electric breakdown of solids; life testing; metal-insulator-semiconductor structures; semiconductor device testing; Fowler-Nordheim equation; MOS capacitors; accelerated testing; cathode electric field data; compensating effects; constant-voltage accelerated test; current data; electrical stress; time-dependent dielectric breakdown; Cathodes; Current measurement; Dielectric breakdown; Dielectric measurements; Electric variables measurement; Equations; Life estimation; MOS capacitors; Random variables; Testing;
fLanguage :
English
Journal_Title :
Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9529
Type :
jour
DOI :
10.1109/24.159810
Filename :
159810
Link To Document :
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