DocumentCode
841517
Title
InAsPSb/InAs diode laser emitting in the 2.5 μm range
Author
Akiba, Shigeyuki ; Matsushima, Y. ; Usami, M.
Author_Institution
KDD Meguro R&D Labs., Tokyo
Volume
24
Issue
17
fYear
1988
fDate
8/18/1988 12:00:00 AM
Firstpage
1069
Lastpage
1071
Abstract
A double heterostructure consisting of InAsPSb alloys was made by LPE-growth on InAs substrates. Lasing action was confirmed at 15-55 K, where the emission wavelength was 2.5-2.7 μm
Keywords
III-V semiconductors; indium antimonide; indium compounds; laser transitions; liquid phase epitaxial growth; optical communication equipment; semiconductor growth; semiconductor junction lasers; 15 to 55 K; 2.5 to 2.7 micron; IR region; InAs substrates; InAsPSb-InAs; LPE-growth; diode laser; double heterostructure; emission wavelength; infrared type; liquid phase epitaxial growth; semiconductor lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
191741
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