Title :
Crystalline pMOS inverter using amorphous thin film transistor as active load
Author :
Lin, H.C. ; Sah, W.J. ; Lee, S.C.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
The integration of the amorphous silicon (a-Si:H) thin film transistor on top of a crystalline p-type silicon metal-oxide-semiconductor (pMOS) transistor to serve as active load has been achieved successfully. The vertical integration of crystalline silicon and amorphous silicon circuits to form the three dimensional structure is a promising technique for future application in high density memory cells and neural network image sensors.
Keywords :
MOS integrated circuits; VLSI; insulated gate field effect transistors; integrated circuit technology; integrated memory circuits; logic gates; thin film transistors; 3D ICs; amorphous Si:H transistor; crystalline Si transistor; high density memory cells; neural network image sensors; vertical integration;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911349
