Title :
Growth of lanthanum manganate buffer layers for coated conductors via a metal-organic decomposition process
Author :
Venkataraman, Kartik ; Hellstrom, Eric E. ; Paranthaman, Mariappan
Author_Institution :
Appl. Supercond. Center, Univ. of Wisconsin-Madison, Madison, WI, USA
fDate :
6/1/2005 12:00:00 AM
Abstract :
Perovskite LaMnO3 (LMO) in thin film embodiment has been identified as a potential candidate for use as a buffer layer in coated conductors. This paper delineates the process-properties relationships investigated for the metal-organic decomposition (MOD) growth of LMO thin films on bare cube-textured Ni-W tape sections. Epitaxial films of pseudocubic perovskite LMO were obtained for samples fired at 1100°C in a humidified forming gas (Ar/4% H2, PH2O∼2 Torr) ambient atmosphere. The surface morphology, epitaxy, and composition of the films are reported.
Keywords :
buffer layers; epitaxial layers; lanthanum compounds; liquid phase deposition; superconducting tapes; surface morphology; 1100 C; LMO thin films; LaMnO3; MOD growth; buffer layers; chemical solution deposition; coated conductors; cube-textured Ni-W tape; epitaxial films; humidified forming gas; metal substrate; metal-organic decomposition process; process-properties relationship; pseudocubic perovskite LMO; surface composition; surface epitaxy; surface morphology; thin film embodiment; Argon; Atmosphere; Buffer layers; Conductive films; Conductors; Epitaxial growth; Lanthanum; Surface morphology; Transistors; Water; Chemical solution deposition; LMO; coated conductor; lanthanum manganate; metal substrate;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
DOI :
10.1109/TASC.2005.848702
