Title :
AuBe ohmic contacts to p-InGaAlAs formed by rapid thermal annealing
Author :
Shen, T.C. ; Reed, Jeff ; Fan, Z.F. ; Gao, G.B. ; Morkoc, H.
Author_Institution :
Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA
Abstract :
AuBe ohmic contacts to p-In0.53Ga0.35Al0.12As (Be:5*1018 cm-3) formed by rapid thermal annealing (RTA) have been studied and compared with those formed by conventional alloying. Using thermally evaporated AuBe, specific contact resistances in the low mu Omega .cm2 range have been achieved by both methods. However, contacts made by RTA demonstrated good thermal stability whereas the contacts by conventional alloying degraded more than one order of magnitude at 250 degrees C for 100 h.
Keywords :
III-V semiconductors; aluminium compounds; annealing; beryllium alloys; contact resistance; gallium arsenide; gold alloys; indium compounds; ohmic contacts; Au-Be; AuBe-In 0.53Ga 0.35Al 0.12As; rapid thermal annealing; semiconductors; specific contact resistances; thermal stability;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911353
