Title :
Preparation and texture evolution of epitaxially grown CeO2 buffer layers using inorganic salts as starting materials for YBCO coated conductors
Author :
Chen, Sheng ; Wang, Sansheng ; Shi, Kai ; Liu, Qing ; Han, Zhenghe
Author_Institution :
Appl. Supercond. Center, Tsinghua Univ., Beijing, China
fDate :
6/1/2005 12:00:00 AM
Abstract :
We report the texture evolution of CeO2 thin films epitaxially grown on yttria-stabilized-zirconia (YSZ) and Ni substrates using inorganic cerium salts as starting materials. The effect of organic solvents on the precursor solution properties is discussed. Inorganic cerium nitrate dissolved in different solvents and chelating agents were spin-coated and annealed. CeO2 films grown on YSZ substrates showed an enhancement of the out-of-plane texture when thermal annealing process was carried out in an oxidizing atmosphere. Texture analysis revealed that a bi-axially aligned cube-textured CeO2 buffer layer could be grown over a wide processing temperature range. High temperature annealing is most beneficial for improvement of the in-plane texture. The results suggest an effective new low-cost way to fabricate CeO2 thin film templates for YBCO coated conductors.
Keywords :
buffer layers; cerium compounds; conductors (electric); epitaxial growth; high-temperature superconductors; nickel; rapid thermal annealing; spin coating; surface texture; yttrium compounds; zirconium compounds; CeO2; Ni; YBCO coated conductors; ZrO2-Y2O3; buffer layers; epitaxial growth; high temperature annealing; in-plane texture; inorganic cerium salts; inorganic precursor solution; organic solvents; out-of-plane texture; precursor solution properties; preparation evolution; texture analysis; texture evolution; thermal annealing; yttria-stabilized-zirconia; Annealing; Atmosphere; Buffer layers; Cerium; Inorganic materials; Solvents; Substrates; Temperature distribution; Transistors; Yttrium barium copper oxide; coated conductor; inorganic precursor solution; texture;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
DOI :
10.1109/TASC.2005.848708