Title :
Subpicosecond spectra gain dynamics in AlGaAs laser diodes
fDate :
8/18/1988 12:00:00 AM
Abstract :
Presents results of tunable probe measurements of ultra-fast dynamics in AlGaAs diode laser amplifiers. The ue of gated upconversion has allowed the observation of subpicosecond gain depletion and recovery with pump-probe separations of up to 30 nm. The data show no sign of spectral hole burning and are consistent with the mechanism of dynamic carrier heating
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; optical communication equipment; semiconductor junction lasers; AlGaAs diode laser amplifiers; AlGaAs laser diodes; gated upconversion; mechanism of dynamic carrier heating; pump-probe separations; semiconductors; spectral hole burning; subpicosecond gain depletion; tunable probe measurements; ultra-fast dynamics;
Journal_Title :
Electronics Letters
