Title :
Characteristic temperature T0 of Ga0.83 In0.17As0.15Sb0.85/Al0.27 Ga0.73As0.02Sb0.98 injection lasers
Author :
Joullie, A. ; Alibert, C. ; Mani, Hamdi ; Pitard, F. ; Tournie, E. ; Boissier, G.
Author_Institution :
CNRS, Univ. des Sci. et Tech. du Languedoc, Montpellier
fDate :
8/18/1988 12:00:00 AM
Abstract :
Stripe injection lasers emitting at 2.18 μm at room temperature with a threshold current density Jth=7-9 kA/cm2 have been prepared from Ga0.83In0.17As0.15Sb0.85/Al 0.27Ga0.73As0.02Sb0.98 double heterojunctions. The characteristic temperature T0 of such devices measured between 80 K and 296 K was found to be T0=90 K, essentially controlled by the Auger effect at high temperature
Keywords :
Auger effect; III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium antimonide; indium compounds; laser transitions; semiconductor junction lasers; temperature; 2.18 micron; 80 to 296 K; 90 K; Auger effect; Ga0.83In0.17As0.15Sb0.85 -Al0.27Ga0.73As0.02Sb0.98 ; IR optical communication; characteristic temperature; double heterojunctions; injection lasers; laser diodes; semiconductor lasers; stripe type; threshold current density;
Journal_Title :
Electronics Letters
