DocumentCode :
841831
Title :
Radiation Effects Characterization of the SBP9900A 16-Bit Microprocessor
Author :
Ellis, Tom
Author_Institution :
Naval Weapons Support Center Crane, Indiana 47522
Volume :
26
Issue :
6
fYear :
1979
Firstpage :
4735
Lastpage :
4739
Abstract :
Characterization of the Texas Instruments SBP9900A 16-bit microprocessor has been performed in radiation environments. The test results indicate that the devices will remain functional at reduced electrical performance following exposures to ionizing radiation levels of 3×106rads(Si) or neutron fluences of 3×1013n/cm2. Transient logic upset was not observed at ionizing radiation dose rates of less than 1×109rads(Si)/sec. The primary failure mode in the neutron and total ionizing dose environments was found to be a reduction in up-gain of the npn portion of the I2L cell. Methods of enhancing the radiation hardness of the SBP9900A are discussed.
Keywords :
Instruments; Ionizing radiation; Logic devices; Logic functions; Logic testing; Manufacturing; Microprocessors; Neutrons; Radiation effects; Read only memory;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1979.4330219
Filename :
4330219
Link To Document :
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