Title :
AlGaAs/GaAs HBT dynamic frequency divider constructed of a single D-type flip-flop
Author :
Yamauchi, Y. ; Nagata, K. ; Nakajima, O. ; Ito, H. ; Nittono, T. ; Ishibashi, T.
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
fDate :
8/18/1988 12:00:00 AM
Abstract :
A new dynamic frequency divider circuit operated by a single D-type flip-flop was designed and fabricated utilising AlGaAs/GaAs heterojunction bipolar transistors (HBTs). The circuit was constructed as a divide-by-four circuit combined with a static divide-by-two circuit for a second stage. A toggle frequency range from 18 to 26.5 GHz was obtained for a total power dissipation of 315 mW at a power supply voltage of 7 V
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; digital integrated circuits; flip-flops; frequency dividers; gallium arsenide; integrated circuit technology; 18 to 26.5 GHz; 315 mW; 7 V; AlGaAs-GaAs; HBT dynamic frequency divider; divide-by-four circuit; dynamic frequency divider circuit; heterojunction bipolar transistors; power supply voltage; semiconductors; single D-type flip-flop; toggle frequency range; total power dissipation;
Journal_Title :
Electronics Letters
